Pushing new limits of EDS detection 08.10.2014
Characterizing light elements (carbon and below) has until recently been considered outside the reach of EDS and better left to alternative techniques. The development of silicon drift-based EDS detectors (SDD), coupled with a disciplined approach to thin window technology, has created renewed interest in light element detection. They provide the effective mapping and quantification of carbon (282 eV) and boron (183 eV) with efficient detection of x-rays down to beryllium (108 eV).
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